Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Series
SCT
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Toote üksikasjad
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Lao andmed ajutiselt ei ole saadaval.
€ 19 600,00
€ 19,60 tk (rullis 1000) (ilma käibemaksuta)
€ 24 304,00
€ 24,304 tk (rullis 1000) (koos käibemaksuga)
1000
€ 19 600,00
€ 19,60 tk (rullis 1000) (ilma käibemaksuta)
€ 24 304,00
€ 24,304 tk (rullis 1000) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Series
SCT
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Toote üksikasjad
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
