Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
10.5mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20V
Maximum Power Dissipation Pd
312W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
172nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Height
4.6mm
Width
9.35mm
Automotive Standard
No
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Lao andmed ajutiselt ei ole saadaval.
€ 7,80
€ 3,90 tk (rullis) (ilma käibemaksuta)
€ 9,67
€ 4,836 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
2
€ 7,80
€ 3,90 tk (rullis) (ilma käibemaksuta)
€ 9,67
€ 4,836 tk (rullis) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Rull)
2
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 2 - 18 | € 3,90 | € 7,80 |
| 20 - 98 | € 2,45 | € 4,90 |
| 100 - 198 | € 1,85 | € 3,70 |
| 200+ | € 1,65 | € 3,30 |
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
10.5mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20V
Maximum Power Dissipation Pd
312W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
172nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Height
4.6mm
Width
9.35mm
Automotive Standard
No
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.