Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
53A
Maximum Drain Source Voltage Vds
300V
Package Type
TO-263
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.04Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
95nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
4.37mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Lao andmed ajutiselt ei ole saadaval.
€ 4 850,00
€ 4,85 tk (rullis 1000) (ilma käibemaksuta)
€ 6 014,00
€ 6,014 tk (rullis 1000) (koos käibemaksuga)
1000
€ 4 850,00
€ 4,85 tk (rullis 1000) (ilma käibemaksuta)
€ 6 014,00
€ 6,014 tk (rullis 1000) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
1000
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
53A
Maximum Drain Source Voltage Vds
300V
Package Type
TO-263
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.04Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
95nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
4.37mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.