Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
78mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
210W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
82nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
9.35mm
Height
4.6mm
Length
10.4mm
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
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Lao andmed ajutiselt ei ole saadaval.
€ 8,10
€ 8,10 tk (ilma käibemaksuta)
€ 10,04
€ 10,04 tk (koos käibemaksuga)
Standard
1
€ 8,10
€ 8,10 tk (ilma käibemaksuta)
€ 10,04
€ 10,04 tk (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
78mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
210W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
82nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
9.35mm
Height
4.6mm
Length
10.4mm
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
