Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
100nC
Maximum Gate Source Voltage Vgs
16V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Lao andmed ajutiselt ei ole saadaval.
€ 28,00
tk (rullis) (ilma käibemaksuta)
€ 34,72
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
20
€ 28,00
tk (rullis) (ilma käibemaksuta)
€ 34,72
tk (rullis) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Rull)
20
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
100nC
Maximum Gate Source Voltage Vgs
16V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.