Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-252
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
120W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
61nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Width
6.2mm
Automotive Standard
No
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Lao andmed ajutiselt ei ole saadaval.
€ 11,50
€ 2,30 tk (rullis) (ilma käibemaksuta)
€ 14,26
€ 2,852 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
5
€ 11,50
€ 2,30 tk (rullis) (ilma käibemaksuta)
€ 14,26
€ 2,852 tk (rullis) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Rull)
5
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-252
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
120W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
61nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Width
6.2mm
Automotive Standard
No
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.