Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
30V
Series
STripFET
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.1V
Maximum Power Dissipation Pd
40W
Maximum Operating Temperature
175°C
Length
6.6mm
Standards/Approvals
No
Width
6.2mm
Height
2.4mm
Automotive Standard
No
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Lao andmed ajutiselt ei ole saadaval.
€ 52,50
€ 0,695 tk (rullis) (ilma käibemaksuta)
€ 65,10
€ 0,862 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
50
€ 52,50
€ 0,695 tk (rullis) (ilma käibemaksuta)
€ 65,10
€ 0,862 tk (rullis) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Rull)
50
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 100 - 490 | € 0,695 | € 6,95 |
| 500 - 990 | € 0,549 | € 5,49 |
| 1000+ | € 0,526 | € 5,26 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
30V
Series
STripFET
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.1V
Maximum Power Dissipation Pd
40W
Maximum Operating Temperature
175°C
Length
6.6mm
Standards/Approvals
No
Width
6.2mm
Height
2.4mm
Automotive Standard
No
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
