Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Series
STripFET F3
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
33.5nC
Maximum Operating Temperature
175°C
Length
6.6mm
Standards/Approvals
No
Width
6.2mm
Height
2.4mm
Automotive Standard
AEC-Q101
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Lao andmed ajutiselt ei ole saadaval.
€ 21,50
€ 1,90 tk (rullis) (ilma käibemaksuta)
€ 26,66
€ 2,356 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
10
€ 21,50
€ 1,90 tk (rullis) (ilma käibemaksuta)
€ 26,66
€ 2,356 tk (rullis) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Rull)
10
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 50 - 245 | € 1,90 | € 9,50 |
| 250 - 495 | € 1,70 | € 8,50 |
| 500+ | € 1,45 | € 7,25 |
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Series
STripFET F3
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
33.5nC
Maximum Operating Temperature
175°C
Length
6.6mm
Standards/Approvals
No
Width
6.2mm
Height
2.4mm
Automotive Standard
AEC-Q101
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.