Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Series
STD
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
14nC
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Length
6.6mm
Height
2.4mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Toote üksikasjad
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
Lao andmed ajutiselt ei ole saadaval.
€ 17,50
€ 1,45 tk (rullis) (ilma käibemaksuta)
€ 21,70
€ 1,798 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
10
€ 17,50
€ 1,45 tk (rullis) (ilma käibemaksuta)
€ 21,70
€ 1,798 tk (rullis) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Rull)
10
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 50 - 245 | € 1,45 | € 7,25 |
| 250 - 495 | € 1,10 | € 5,50 |
| 500+ | € 0,967 | € 4,84 |
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Series
STD
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
14nC
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Length
6.6mm
Height
2.4mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Toote üksikasjad
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.