Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MDmesh V Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220FP
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.299Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
9.3mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Toote üksikasjad
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Lao andmed ajutiselt ei ole saadaval.
€ 7,60
€ 3,80 tk (pakis 2) (ilma käibemaksuta)
€ 9,42
€ 4,712 tk (pakis 2) (koos käibemaksuga)
Standard
2
€ 7,60
€ 3,80 tk (pakis 2) (ilma käibemaksuta)
€ 9,42
€ 4,712 tk (pakis 2) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
2
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 2 - 18 | € 3,80 | € 7,60 |
| 20 - 98 | € 3,10 | € 6,20 |
| 100 - 198 | € 2,35 | € 4,70 |
| 200+ | € 2,10 | € 4,20 |
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MDmesh V Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220FP
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.299Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
9.3mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Toote üksikasjad
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.