Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
18A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
190mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
30W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
36nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Toote üksikasjad
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Lao andmed ajutiselt ei ole saadaval.
€ 81,25
€ 2,95 tk (torus) (ilma käibemaksuta)
€ 100,75
€ 3,658 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
25
€ 81,25
€ 2,95 tk (torus) (ilma käibemaksuta)
€ 100,75
€ 3,658 tk (torus) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Tuub)
25
| kogus | Ühikuhind | Per Tuub |
|---|---|---|
| 50 - 120 | € 2,95 | € 14,75 |
| 125+ | € 2,45 | € 12,25 |
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
18A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
190mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
30W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
36nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Toote üksikasjad
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.