Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
86A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-263
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
Päritoluriik
China
Toote üksikasjad
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
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Lao andmed ajutiselt ei ole saadaval.
€ 1 600,00
€ 1,60 tk (rullis 1000) (ilma käibemaksuta)
€ 1 984,00
€ 1,984 tk (rullis 1000) (koos käibemaksuga)
1000
€ 1 600,00
€ 1,60 tk (rullis 1000) (ilma käibemaksuta)
€ 1 984,00
€ 1,984 tk (rullis 1000) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
86A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-263
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
Päritoluriik
China
Toote üksikasjad
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
