Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
200A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
600W
Package Type
ISOTOP
Mount Type
Clamp
Channel Type
Type N
Pin Count
4
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
38.2mm
Height
12.2mm
Standards/Approvals
ECOPACK, JESD97
Width
31.7mm
Series
Powermesh
Automotive Standard
No
Toote üksikasjad
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 29,70
€ 29,70 tk (ilma käibemaksuta)
€ 36,83
€ 36,83 tk (koos käibemaksuga)
Standard
1
€ 29,70
€ 29,70 tk (ilma käibemaksuta)
€ 36,83
€ 36,83 tk (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
1
Ideate. Create. Collaborate
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Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
200A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
600W
Package Type
ISOTOP
Mount Type
Clamp
Channel Type
Type N
Pin Count
4
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
38.2mm
Height
12.2mm
Standards/Approvals
ECOPACK, JESD97
Width
31.7mm
Series
Powermesh
Automotive Standard
No
Toote üksikasjad
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
