Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
7A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
RoHS
Width
4.6mm
Series
Powermesh
Height
16.4mm
Automotive Standard
No
Toote üksikasjad
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 21,00
€ 1,85 tk (torus) (ilma käibemaksuta)
€ 26,04
€ 2,294 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
10
€ 21,00
€ 1,85 tk (torus) (ilma käibemaksuta)
€ 26,04
€ 2,294 tk (torus) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Tuub)
10
| kogus | Ühikuhind | Per Tuub |
|---|---|---|
| 20 - 98 | € 1,85 | € 3,70 |
| 100 - 198 | € 1,65 | € 3,30 |
| 200+ | € 1,40 | € 2,80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
7A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
RoHS
Width
4.6mm
Series
Powermesh
Height
16.4mm
Automotive Standard
No
Toote üksikasjad
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
