Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
40A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-220
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
Päritoluriik
China
Toote üksikasjad
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Lao andmed ajutiselt ei ole saadaval.
€ 9,25
€ 1,85 tk (pakis 5) (ilma käibemaksuta)
€ 11,47
€ 2,294 tk (pakis 5) (koos käibemaksuga)
Standard
5
€ 9,25
€ 1,85 tk (pakis 5) (ilma käibemaksuta)
€ 11,47
€ 2,294 tk (pakis 5) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
5
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 5 - 5 | € 1,85 | € 9,25 |
| 10 - 20 | € 1,75 | € 8,75 |
| 25+ | € 1,70 | € 8,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
40A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-220
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
Päritoluriik
China
Toote üksikasjad
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
