Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
216A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
714W
Number of Transistors
2
Package Type
ECOPACK
Configuration
Single
Mount Type
Surface
Channel Type
NPN
Pin Count
9
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
4mm
Height
5.5mm
Standards/Approvals
UL1557
Automotive Standard
AEC-Q101
Päritoluriik
China
Toote üksikasjad
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Lao andmed ajutiselt ei ole saadaval.
€ 26,30
€ 26,30 tk (ilma käibemaksuta)
€ 32,61
€ 32,61 tk (koos käibemaksuga)
Standard
1
€ 26,30
€ 26,30 tk (ilma käibemaksuta)
€ 32,61
€ 32,61 tk (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
1
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
216A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
714W
Number of Transistors
2
Package Type
ECOPACK
Configuration
Single
Mount Type
Surface
Channel Type
NPN
Pin Count
9
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
4mm
Height
5.5mm
Standards/Approvals
UL1557
Automotive Standard
AEC-Q101
Päritoluriik
China
Toote üksikasjad
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.