Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
145A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
441W
Package Type
TO-247-4
Mount Type
Through Hole
Channel Type
Type N
Pin Count
4
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.9mm
Height
5.1mm
Standards/Approvals
RoHS
Series
STG
Automotive Standard
No
Toote üksikasjad
The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Lao andmed ajutiselt ei ole saadaval.
€ 207,00
€ 6,90 tk (torus 30) (ilma käibemaksuta)
€ 256,68
€ 8,556 tk (torus 30) (koos käibemaksuga)
30
€ 207,00
€ 6,90 tk (torus 30) (ilma käibemaksuta)
€ 256,68
€ 8,556 tk (torus 30) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
145A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
441W
Package Type
TO-247-4
Mount Type
Through Hole
Channel Type
Type N
Pin Count
4
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.9mm
Height
5.1mm
Standards/Approvals
RoHS
Series
STG
Automotive Standard
No
Toote üksikasjad
The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
