Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
54A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
70ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.7V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
JEDEC
Width
5.15mm
Series
SMPS
Automotive Standard
No
Toote üksikasjad
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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JOIN FOR FREE
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Lao andmed ajutiselt ei ole saadaval.
€ 20,50
€ 2,05 tk (torus) (ilma käibemaksuta)
€ 25,42
€ 2,54 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
10
€ 20,50
€ 2,05 tk (torus) (ilma käibemaksuta)
€ 25,42
€ 2,54 tk (torus) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Tuub)
10
| kogus | Ühikuhind |
|---|---|
| 10 - 99 | € 2,05 |
| 100 - 599 | € 1,70 |
| 600+ | € 1,55 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
54A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
70ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.7V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
JEDEC
Width
5.15mm
Series
SMPS
Automotive Standard
No
Toote üksikasjad
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
