Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
80A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
283W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
RoHS
Series
H
Automotive Standard
No
Toote üksikasjad
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 17,40
€ 3,80 tk (torus) (ilma käibemaksuta)
€ 21,58
€ 4,712 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
4
€ 17,40
€ 3,80 tk (torus) (ilma käibemaksuta)
€ 21,58
€ 4,712 tk (torus) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Tuub)
4
| kogus | Ühikuhind | Per Tuub |
|---|---|---|
| 20 - 98 | € 3,80 | € 7,60 |
| 100 - 198 | € 3,40 | € 6,80 |
| 200+ | € 2,95 | € 5,90 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
80A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
283W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
RoHS
Series
H
Automotive Standard
No
Toote üksikasjad
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
