Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK-2
Series
STH200
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
4mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
93nC
Maximum Power Dissipation Pd
340W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Toote üksikasjad
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.
Lao andmed ajutiselt ei ole saadaval.
€ 4 900,00
€ 4,90 tk (rullis 1000) (ilma käibemaksuta)
€ 6 076,00
€ 6,076 tk (rullis 1000) (koos käibemaksuga)
1000
€ 4 900,00
€ 4,90 tk (rullis 1000) (ilma käibemaksuta)
€ 6 076,00
€ 6,076 tk (rullis 1000) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
1000
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK-2
Series
STH200
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
4mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
93nC
Maximum Power Dissipation Pd
340W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Toote üksikasjad
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.