Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
H2PAK
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
315W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Operating Temperature
175°C
Length
15.8mm
Standards/Approvals
No
Width
10.4mm
Height
4.8mm
Automotive Standard
No
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Lao andmed ajutiselt ei ole saadaval.
€ 10,20
€ 5,10 tk (pakis 2) (ilma käibemaksuta)
€ 12,65
€ 6,324 tk (pakis 2) (koos käibemaksuga)
Standard
2
€ 10,20
€ 5,10 tk (pakis 2) (ilma käibemaksuta)
€ 12,65
€ 6,324 tk (pakis 2) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
2
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
H2PAK
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
315W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Operating Temperature
175°C
Length
15.8mm
Standards/Approvals
No
Width
10.4mm
Height
4.8mm
Automotive Standard
No
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.