Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
H2PAK
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
315W
Maximum Operating Temperature
175°C
Length
15.25mm
Standards/Approvals
No
Width
10.4mm
Height
4.8mm
Automotive Standard
No
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Lao andmed ajutiselt ei ole saadaval.
€ 24,00
tk (rullis) (ilma käibemaksuta)
€ 29,76
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
4
€ 24,00
tk (rullis) (ilma käibemaksuta)
€ 29,76
tk (rullis) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Rull)
4
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
H2PAK
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
315W
Maximum Operating Temperature
175°C
Length
15.25mm
Standards/Approvals
No
Width
10.4mm
Height
4.8mm
Automotive Standard
No
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.