Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Series
STI28
Package Type
I2PAK
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
150mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
170W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
36nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
4.6mm
Height
9.3mm
Length
10.4mm
Automotive Standard
No
Toote üksikasjad
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Lao andmed ajutiselt ei ole saadaval.
€ 132,50
€ 2,65 tk (torus 50) (ilma käibemaksuta)
€ 164,30
€ 3,286 tk (torus 50) (koos käibemaksuga)
50
€ 132,50
€ 2,65 tk (torus 50) (ilma käibemaksuta)
€ 164,30
€ 3,286 tk (torus 50) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Series
STI28
Package Type
I2PAK
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
150mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
170W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
36nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
4.6mm
Height
9.3mm
Length
10.4mm
Automotive Standard
No
Toote üksikasjad
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
