Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Package Type
I2PAK
Series
STI28
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
150mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
36nC
Maximum Power Dissipation Pd
170W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
9.3mm
Standards/Approvals
No
Automotive Standard
No
Toote üksikasjad
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Lao andmed ajutiselt ei ole saadaval.
€ 130,00
€ 2,60 tk (torus 50) (ilma käibemaksuta)
€ 161,20
€ 3,224 tk (torus 50) (koos käibemaksuga)
50
€ 130,00
€ 2,60 tk (torus 50) (ilma käibemaksuta)
€ 161,20
€ 3,224 tk (torus 50) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
50
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Package Type
I2PAK
Series
STI28
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
150mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
36nC
Maximum Power Dissipation Pd
170W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
9.3mm
Standards/Approvals
No
Automotive Standard
No
Toote üksikasjad
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.