Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
2mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
6.15mm
Width
5.2mm
Standards/Approvals
No
Automotive Standard
No
Toote üksikasjad
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Lao andmed ajutiselt ei ole saadaval.
€ 14,75
€ 2,95 tk (pakis 5) (ilma käibemaksuta)
€ 18,29
€ 3,658 tk (pakis 5) (koos käibemaksuga)
Standard
5
€ 14,75
€ 2,95 tk (pakis 5) (ilma käibemaksuta)
€ 18,29
€ 3,658 tk (pakis 5) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
5
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 5 - 45 | € 2,95 | € 14,75 |
| 50 - 120 | € 2,65 | € 13,25 |
| 125+ | € 2,20 | € 11,00 |
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
2mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
6.15mm
Width
5.2mm
Standards/Approvals
No
Automotive Standard
No
Toote üksikasjad
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.