Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
3A
Maximum Drain Source Voltage Vds
60V
Package Type
SOT-223
Series
STripFET
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.6W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6.4nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
175°C
Height
1.8mm
Length
6.7mm
Standards/Approvals
No
Width
3.7mm
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Lao andmed ajutiselt ei ole saadaval.
€ 33,00
€ 0,438 tk (rullis) (ilma käibemaksuta)
€ 40,92
€ 0,543 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
50
€ 33,00
€ 0,438 tk (rullis) (ilma käibemaksuta)
€ 40,92
€ 0,543 tk (rullis) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Rull)
50
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 100 - 490 | € 0,438 | € 4,38 |
| 500+ | € 0,389 | € 3,89 |
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
3A
Maximum Drain Source Voltage Vds
60V
Package Type
SOT-223
Series
STripFET
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.6W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6.4nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
175°C
Height
1.8mm
Length
6.7mm
Standards/Approvals
No
Width
3.7mm
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.