STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220 STP13NK60Z

RS tootekood: 485-7490PBränd: STMicroelectronicsTootja Part nr.: STP13NK60Z
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

600 V

Series

MDmesh, SuperMESH

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

66 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

9.15mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Lao andmed ajutiselt ei ole saadaval.

€ 16,00

tk (torus) (ilma käibemaksuta)

€ 19,52

tk (torus) (koos käibemaksuga)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220 STP13NK60Z
Valige pakendi tüüp

€ 16,00

tk (torus) (ilma käibemaksuta)

€ 19,52

tk (torus) (koos käibemaksuga)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220 STP13NK60Z
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

600 V

Series

MDmesh, SuperMESH

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

66 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

9.15mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more