Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
158W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Toote üksikasjad
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Lao andmed ajutiselt ei ole saadaval.
€ 13,00
€ 2,60 tk (pakis 5) (ilma käibemaksuta)
€ 16,12
€ 3,224 tk (pakis 5) (koos käibemaksuga)
Standard
5
€ 13,00
€ 2,60 tk (pakis 5) (ilma käibemaksuta)
€ 16,12
€ 3,224 tk (pakis 5) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
5
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 5 - 45 | € 2,60 | € 13,00 |
| 50 - 120 | € 2,30 | € 11,50 |
| 125+ | € 1,90 | € 9,50 |
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
158W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Toote üksikasjad
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.