STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 14 A, 500 V, 3-Pin TO-220 STP14NK50Z

RS tootekood: 761-0014PBränd: STMicroelectronicsTootja Part nr.: STP14NK50Z
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

500 V

Series

MDmesh, SuperMESH

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

69 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

15.75mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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€ 24,00

€ 2,40 tk (torus) (ilma käibemaksuta)

€ 29,76

€ 2,976 tk (torus) (koos käibemaksuga)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 14 A, 500 V, 3-Pin TO-220 STP14NK50Z
Valige pakendi tüüp

€ 24,00

€ 2,40 tk (torus) (ilma käibemaksuta)

€ 29,76

€ 2,976 tk (torus) (koos käibemaksuga)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 14 A, 500 V, 3-Pin TO-220 STP14NK50Z

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Valige pakendi tüüp

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kogusÜhikuhindPer Tuub
10 - 95€ 2,40€ 12,00
100 - 495€ 1,95€ 9,75
500 - 995€ 1,70€ 8,50
1000+€ 1,45€ 7,25

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

500 V

Series

MDmesh, SuperMESH

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

69 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

15.75mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more