Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Typical Gate Charge Qg @ Vgs
127nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Toote üksikasjad
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Lao andmed ajutiselt ei ole saadaval.
€ 8,60
€ 4,30 tk (pakis 2) (ilma käibemaksuta)
€ 10,66
€ 5,332 tk (pakis 2) (koos käibemaksuga)
Standard
2
€ 8,60
€ 4,30 tk (pakis 2) (ilma käibemaksuta)
€ 10,66
€ 5,332 tk (pakis 2) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
2
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 2 - 18 | € 4,30 | € 8,60 |
| 20 - 98 | € 3,80 | € 7,60 |
| 100 - 198 | € 3,40 | € 6,80 |
| 200+ | € 2,90 | € 5,80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Typical Gate Charge Qg @ Vgs
127nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Toote üksikasjad
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
