Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Toote üksikasjad
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Lao andmed ajutiselt ei ole saadaval.
€ 42,50
€ 3,75 tk (torus) (ilma käibemaksuta)
€ 52,70
€ 4,65 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
10
€ 42,50
€ 3,75 tk (torus) (ilma käibemaksuta)
€ 52,70
€ 4,65 tk (torus) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Tuub)
10
| kogus | Ühikuhind | Per Tuub |
|---|---|---|
| 20 - 98 | € 3,75 | € 7,50 |
| 100 - 198 | € 3,35 | € 6,70 |
| 200+ | € 2,90 | € 5,80 |
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Toote üksikasjad
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.