Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
2.7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Lao andmed ajutiselt ei ole saadaval.
€ 9,30
€ 4,65 tk (pakis 2) (ilma käibemaksuta)
€ 11,53
€ 5,766 tk (pakis 2) (koos käibemaksuga)
Standard
2
€ 9,30
€ 4,65 tk (pakis 2) (ilma käibemaksuta)
€ 11,53
€ 5,766 tk (pakis 2) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
2
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
2.7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.