Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
42A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
63mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
98nC
Maximum Power Dissipation Pd
250W
Maximum Gate Source Voltage Vgs
-25, +25V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
15.75mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Lao andmed ajutiselt ei ole saadaval.
€ 57,50
tk (torus) (ilma käibemaksuta)
€ 71,30
tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
5
€ 57,50
tk (torus) (ilma käibemaksuta)
€ 71,30
tk (torus) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Tuub)
5
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
42A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
63mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
98nC
Maximum Power Dissipation Pd
250W
Maximum Gate Source Voltage Vgs
-25, +25V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
15.75mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.