Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
2A
Maximum Drain Source Voltage Vds
30V
Package Type
SOT-23
Series
STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
150°C
Height
1.3mm
Length
3.04mm
Standards/Approvals
No
Width
1.75mm
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Lao andmed ajutiselt ei ole saadaval.
€ 94,75
€ 0,341 tk (rullis) (ilma käibemaksuta)
€ 117,49
€ 0,423 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
250
€ 94,75
€ 0,341 tk (rullis) (ilma käibemaksuta)
€ 117,49
€ 0,423 tk (rullis) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Rull)
250
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 500 - 1200 | € 0,341 | € 17,05 |
| 1250+ | € 0,28 | € 14,00 |
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
2A
Maximum Drain Source Voltage Vds
30V
Package Type
SOT-23
Series
STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
150°C
Height
1.3mm
Length
3.04mm
Standards/Approvals
No
Width
1.75mm
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.