Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
40V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
20mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.7W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
34nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
150°C
Height
1.5mm
Length
5mm
Standards/Approvals
No
Width
4mm
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Lao andmed ajutiselt ei ole saadaval.
€ 10,50
€ 1,05 tk (pakis 10) (ilma käibemaksuta)
€ 13,02
€ 1,302 tk (pakis 10) (koos käibemaksuga)
Standard
10
€ 10,50
€ 1,05 tk (pakis 10) (ilma käibemaksuta)
€ 13,02
€ 1,302 tk (pakis 10) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
10
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
40V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
20mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.7W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
34nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
150°C
Height
1.5mm
Length
5mm
Standards/Approvals
No
Width
4mm
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.