Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
17nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Height
1.65mm
Length
5mm
Standards/Approvals
No
Width
4mm
Automotive Standard
No
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Lao andmed ajutiselt ei ole saadaval.
€ 9,46
€ 0,946 tk (pakis 10) (ilma käibemaksuta)
€ 11,73
€ 1,173 tk (pakis 10) (koos käibemaksuga)
Standard
10
€ 9,46
€ 0,946 tk (pakis 10) (ilma käibemaksuta)
€ 11,73
€ 1,173 tk (pakis 10) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
10
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
17nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Height
1.65mm
Length
5mm
Standards/Approvals
No
Width
4mm
Automotive Standard
No
Toote üksikasjad
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.