Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-247
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
62.5nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Lao andmed ajutiselt ei ole saadaval.
€ 13,80
€ 4,55 tk (torus) (ilma käibemaksuta)
€ 17,11
€ 5,64 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
2
€ 13,80
€ 4,55 tk (torus) (ilma käibemaksuta)
€ 17,11
€ 5,64 tk (torus) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Tuub)
2
| kogus | Ühikuhind |
|---|---|
| 10 - 99 | € 4,55 |
| 100+ | € 3,50 |
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-247
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
62.5nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.