Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.6V
Maximum Operating Temperature
200°C
Length
10.4mm
Height
15.8mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Stock information temporarily unavailable.
€ 476.00
€ 476.00 1 Tube of 30 (Exc. Vat)
€ 590.24
€ 590.24 1 Tube of 30 (inc. VAT)
1
€ 476.00
€ 476.00 1 Tube of 30 (Exc. Vat)
€ 590.24
€ 590.24 1 Tube of 30 (inc. VAT)
Stock information temporarily unavailable.
1
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.6V
Maximum Operating Temperature
200°C
Length
10.4mm
Height
15.8mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.