Technical Documents
Specifications
Brand
onsemiProduct Type
Optocoupler
Mount Type
Through Hole
Maximum Forward Voltage
1.3V
Number of Channels
2
Packaging
Tube
Number of Pins
8
Package Type
PDIP
Input Current Type
DC
Typical Rise Time
2.4μs
Maximum Input Current
10mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-55°C
Maximum Current Transfer Ratio
6%
Maximum Operating Temperature
100°C
Typical Fall Time
2.4μs
Minimum Current Transfer Ratio
0.5%
Standards/Approvals
EN, IEC, UL
Series
MCT
Automotive Standard
No
Product Details
The MCT9001 optocoupler has two channels for density applications. For four channel applications, two packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
Stock information temporarily unavailable.
€ 26.85
€ 0.537 Each (In a Tube of 50) (Exc. Vat)
€ 33.29
€ 0.666 Each (In a Tube of 50) (inc. VAT)
50
€ 26.85
€ 0.537 Each (In a Tube of 50) (Exc. Vat)
€ 33.29
€ 0.666 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | € 0.537 | € 26.85 |
| 100 - 950 | € 0.315 | € 15.75 |
| 1000 - 1950 | € 0.307 | € 15.35 |
| 2000 - 9950 | € 0.299 | € 14.95 |
| 10000+ | € 0.292 | € 14.60 |
Technical Documents
Specifications
Brand
onsemiProduct Type
Optocoupler
Mount Type
Through Hole
Maximum Forward Voltage
1.3V
Number of Channels
2
Packaging
Tube
Number of Pins
8
Package Type
PDIP
Input Current Type
DC
Typical Rise Time
2.4μs
Maximum Input Current
10mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-55°C
Maximum Current Transfer Ratio
6%
Maximum Operating Temperature
100°C
Typical Fall Time
2.4μs
Minimum Current Transfer Ratio
0.5%
Standards/Approvals
EN, IEC, UL
Series
MCT
Automotive Standard
No
Product Details
The MCT9001 optocoupler has two channels for density applications. For four channel applications, two packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
