Technical Documents
Specifications
Brand
onsemiProduct Type
Schottky Diode & Rectifier
Mount Type
Through Hole
Package Type
TO-220-2
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
UJ3
Rectifier Type
Merged Pin Schottky
Pin Count
2
Peak Reverse Current Ir
25A
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
29A
Maximum Operating Temperature
175°C
Length
10.16mm
Height
15.37mm
Standards/Approvals
Pb-Free, RoHS
Width
4.19mm
Automotive Standard
No
Country of Origin
Philippines
Product Details
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Stock information temporarily unavailable.
€ 7.25
€ 1.45 Each (In a Bag of 5) (Exc. Vat)
€ 8.99
€ 1.798 Each (In a Bag of 5) (inc. VAT)
Standard
5
€ 7.25
€ 1.45 Each (In a Bag of 5) (Exc. Vat)
€ 8.99
€ 1.798 Each (In a Bag of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Technical Documents
Specifications
Brand
onsemiProduct Type
Schottky Diode & Rectifier
Mount Type
Through Hole
Package Type
TO-220-2
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
UJ3
Rectifier Type
Merged Pin Schottky
Pin Count
2
Peak Reverse Current Ir
25A
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
29A
Maximum Operating Temperature
175°C
Length
10.16mm
Height
15.37mm
Standards/Approvals
Pb-Free, RoHS
Width
4.19mm
Automotive Standard
No
Country of Origin
Philippines
Product Details
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.