Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-10A
Maximum Collector Emitter Voltage Vceo
-50V
Package Type
SOT-89
Mount Type
Surface
Transistor Configuration
Single
Maximum Power Dissipation Pd
1.4W
Transistor Polarity
PNP
Minimum DC Current Gain hFE
80
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Pin Count
4
Maximum Operating Temperature
150°C
Length
4.6mm
Height
1.6mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The 2STF2550 and 2STN2550 are PNP transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Stock information temporarily unavailable.
€ 500.00
€ 0.20 Each (On a Reel of 2500) (Exc. Vat)
€ 620.00
€ 0.248 Each (On a Reel of 2500) (inc. VAT)
2500
€ 500.00
€ 0.20 Each (On a Reel of 2500) (Exc. Vat)
€ 620.00
€ 0.248 Each (On a Reel of 2500) (inc. VAT)
Stock information temporarily unavailable.
2500
| Quantity | Unit price | Per Reel |
|---|---|---|
| 2500 - 2500 | € 0.20 | € 500.00 |
| 5000 - 7500 | € 0.165 | € 412.50 |
| 10000 - 22500 | € 0.156 | € 390.00 |
| 25000+ | € 0.151 | € 377.50 |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-10A
Maximum Collector Emitter Voltage Vceo
-50V
Package Type
SOT-89
Mount Type
Surface
Transistor Configuration
Single
Maximum Power Dissipation Pd
1.4W
Transistor Polarity
PNP
Minimum DC Current Gain hFE
80
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Pin Count
4
Maximum Operating Temperature
150°C
Length
4.6mm
Height
1.6mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The 2STF2550 and 2STN2550 are PNP transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.