Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
63nC
Maximum Power Dissipation Pd
290W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.4V
Maximum Operating Temperature
200°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
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€ 21.00
€ 21.00 Each (Exc. Vat)
€ 26.04
€ 26.04 Each (inc. VAT)
Standard
1
€ 21.00
€ 21.00 Each (Exc. Vat)
€ 26.04
€ 26.04 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
63nC
Maximum Power Dissipation Pd
290W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.4V
Maximum Operating Temperature
200°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
