Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
60V
Series
STripFET F7
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.5mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
158W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
4.6mm
Height
9.15mm
Length
10.4mm
Automotive Standard
No
Product Details
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Stock information temporarily unavailable.
€ 13.25
€ 2.65 Each (In a Pack of 5) (Exc. Vat)
€ 16.43
€ 3.286 Each (In a Pack of 5) (inc. VAT)
Standard
5
€ 13.25
€ 2.65 Each (In a Pack of 5) (Exc. Vat)
€ 16.43
€ 3.286 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | € 2.65 | € 13.25 |
| 50 - 120 | € 2.40 | € 12.00 |
| 125+ | € 1.95 | € 9.75 |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
60V
Series
STripFET F7
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.5mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
158W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
4.6mm
Height
9.15mm
Length
10.4mm
Automotive Standard
No
Product Details
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.