STMicroelectronics MDmesh M2 N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
600 V
Series
MDmesh M2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
450 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Width
20.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
118 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
5.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Päritoluriik
China
Toote üksikasjad
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
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€ 53,50
tk (torus) (ilma käibemaksuta)
€ 66,34
tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
5
€ 53,50
tk (torus) (ilma käibemaksuta)
€ 66,34
tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
5
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
600 V
Series
MDmesh M2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
450 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Width
20.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
118 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
5.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Päritoluriik
China
Toote üksikasjad
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products